DocumentCode :
1512442
Title :
Statistical equipment modeling for VLSI manufacturing: an application for LPCVD
Author :
Lin, Kuang-Kuo ; Spanos, Costas J.
Author_Institution :
Dept. of Electr. Eng & Comput. Sci., California Univ., Berkeley, CA, USA
Volume :
3
Issue :
4
fYear :
1990
fDate :
11/1/1990 12:00:00 AM
Firstpage :
216
Lastpage :
229
Abstract :
An equipment characterization and modeling methodology has been developed. The methodology is based on the development of generic first-principle process models. These models are subsequently refined and fitted to specific manufacturing equipment by using a multistage D-optimal experimental design. The methodology has been successfully applied to a low-pressure chemical vapor deposition (LPCVD) furnace for undoped polysilicon deposition. A two-stage D-optimal experiment with 24 runs has yielded fitted models for the film growth rate and film residual stress. The calibrated models agree well with the experimental data and account for the observed variations
Keywords :
VLSI; chemical vapour deposition; furnaces; integrated circuit manufacture; statistical analysis; LPCVD; VLSI manufacturing; calibrated models; equipment characterization; film growth rate; film residual stress; first-principle process models; furnace; low-pressure chemical vapor deposition; modeling methodology; multistage D-optimal experimental design; statistical equipment modelling; undoped polysilicon deposition; yielded fitted models; Boats; Chemical vapor deposition; Design for experiments; Furnaces; Process control; Process design; Refining; Semiconductor films; Very large scale integration; Virtual manufacturing;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.61971
Filename :
61971
Link To Document :
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