DocumentCode :
1512479
Title :
High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for 
Junction Diode
Author :
Thareja, G. ; Chopra, S. ; Adams, B. ; Kim, Y. ; Moffatt, S. ; Saraswat, K. ; Nishi, Y.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Volume :
32
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
838
Lastpage :
840
Abstract :
Highly activated n-type dopant is essential for n+/p germanium diodes which will be in use for source/drain regions in Ge n-MOSFET as the geometry scaling proceeds. This letter has investigated a combination of ion implantation of Sb in Ge and subsequent laser annealing, which resulted in highly activated Sb beyond 1020 cm-3. Well-behaved Sb-doped nv/p Ge diode I-V characteristics have been demonstrated combined with TEM, SIMS, and spreading resistance profiling characterization.
Keywords :
MOSFET; antimony; diodes; laser beam annealing; p-n junctions; Ge; SIMS; Sb; TEM; diode I-V characteristics; dopant activation; ion implantation; junction diode; laser annealing; n-MOSFET; spreading resistance profiling characterization; Annealing; Germanium; Ion implantation; Junctions; Measurement by laser beam; Resistance; Semiconductor lasers; Activation; antimony; donor; dopant; germanium; junction; n-MOSFET; n-type;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2142410
Filename :
5765423
Link To Document :
