Title :
Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT
Author :
Wen-Chau Liu ; Wen-Lung Chang ; Wen-Shiung Lour ; Shiou-Ying Cheng ; Yung-Hsin Shie ; Jing-Yuh Chen ; Wei-Chou Wang ; Hsi-Jen Pan
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/1999 12:00:00 AM
Abstract :
We reported a newly designed double delta-doped GaInP/InGaAs pseudomorphic HEMT with high temperature-dependent performances. In addition to the novel aspects of the proposed HEMT structure, temperature-dependent behaviors including a high-voltage (40 V) and a low-leakage current (17 nA/mm) are further improved by eliminating mesa-sidewall effect. We obtained nearly current-independent transconductance in the temperature of 300-450 K. The measured current gain cutoff frequency fT and maximum oscillation frequency fmax for a 1-μm gate device are 12 and 28.4 GHz, respectively.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; leakage currents; semiconductor device breakdown; 12 to 28.4 GHz; 300 to 450 K; 40 V; Ga/sub 0.51/In/sub 0.49/P-In/sub 0.15/Ga/sub 0.85/As; breakdown voltage; current gain cutoff frequency; double delta-doped GaInP/InGaAs pseudomorphic HEMT; leakage current; maximum oscillation frequency; mesa sidewall effect; temperature dependence; transconductance; Current measurement; Cutoff frequency; Frequency measurement; Gain measurement; HEMTs; Indium gallium arsenide; PHEMTs; Temperature; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
