Title :
A voltage controlled current source gate drive method for IGBT devices
Author :
Lu Shu ; Junming Zhang ; Fangzheng Peng ; Zhiqian Chen
Author_Institution :
Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
To reduce the power dissipation and switching stress of high power IGBTs during switching transient, a new active gate drive method based on voltage controlled current source (VCCS) is proposed in this paper. Compared to the conventional gate drive (CGD) for IGBTs, the proposed current source gate drive (CSD) method achieves faster switching speed and effective control on current overshoot at turn-on and voltage overshoot at turn-off. Thus the capacity utilization of IGBT devices can be improved. The detailed operation principle of the proposed CSD method is presented, and the experiment results based on a 1200V/200A IGBT module are also provided.
Keywords :
insulated gate bipolar transistors; power transistors; switching transients; voltage control; CGD; CSD method; IGBT devices; IGBT module; VCCS; active gate drive method; conventional gate drive; current 200 A; current overshoot; current source gate drive; high power IGBT; insulated gate bipolar transistors; power dissipation; switching speed; switching stress; switching transient; voltage 1200 V; voltage controlled current source; voltage overshoot; Delays; Insulated gate bipolar transistors; Logic gates; Resistance; Switches; Transient analysis; Voltage control;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
DOI :
10.1109/ECCE.2014.6954158
