Title :
High temperature operation of lattice matched and strained InGaAs-InP quantum well lasers
Author :
Temkin, H. ; Tanbun-Ek, T. ; Logan, R.A. ; Cebula, D.A. ; Sergent, A.M.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
The temperature dependence of lattice matched and strained InGaAs-InP quantum well lasers operating between 1.48 and 1.56 mu m is described. Devices grown under tensile and compressive strain, with an In concentration in the range of 0.43>
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; semiconductor junction lasers; 0.5 to 1.0 mm; 1.48 to 1.56 micron; 110 degC; 3 mA; In concentration; InGaAs-InP quantum well lasers; MOVPE; compressive strain; high-reflection-coated facet; internal losses; lattice matched; low threshold currents; metalorganic vapour phase epitaxy; semiconductor growth; strained diode lasers; temperature dependence; tensile strain; Capacitive sensors; Coatings; Indium gallium arsenide; Lattices; Optical materials; Optical reflection; Quantum well lasers; Radiative recombination; Temperature dependence; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
