High-speed modulation of InGaAs-GaAs strained-layer multiple-quantum-well lasers fabricated by chemically assisted ion-beam etching

Author

Lester, L.F. ; Schaff, W.J. ; Offsey, S.D. ; Eastman, L.F.

Author_Institution

Cornell Univ., Ithaca, NY, USA

Volume

3

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

403

Lastpage

405

Abstract

Graded-index separate-confinement heterostructure (GRINSCH) strained-layer lasers with five In/sub 0.3/Ga/sub 0.7/As quantum wells have been fabricated with cavity lengths from 50 to 400 mu m using chemically assisted ion-beam etching (CAIBE) to form the laser mirrors. The dry-etching process is thermally assisted, which gives a reproducible etching rate. A minimum threshold-current value is observed at a cavity length of 50 mu m, showing that the multiquantum-well design is optimum for short-cavity lasers. A relaxation oscillation frequency of 10 GHz and a -3 dB bandwidth of 15 GHz have been measured on a 200*10 mu m mesa-structure device.<>

Keywords

III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; laser cavity resonators; optical modulation; semiconductor junction lasers; semiconductor quantum wells; sputter etching; III-V semiconductors; In/sub 0.3/Ga/sub 0.7/As; InGaAs-GaAs; InGaAs-GaAs strained layer multiple quantum well lasers; bandwidth; cavity lengths; chemically assisted ion-beam etching; dry-etching process; graded index separate confinement heterostructure; high speed modulation; laser mirrors; mesa-structure device; minimum threshold-current; relaxation oscillation frequency; reproducible etching rate; short-cavity lasers; Chemical lasers; Etching; Frequency; Gallium arsenide; Laser theory; Mirrors; Optical buffering; Quantum well devices; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.93859

Filename

93859