Title :
X-band high power SiGe BiCMOS multi-function chip for active phased array radars
Author :
Jeong, Jong ; Yom, I.B.
Author_Institution :
RF & Satellite Payload Res. Team, Electron. & Telecommun. Res., Daejeon, South Korea
Abstract :
An X-band high power multi-function chip has been designed and fabricated using 0.25 m SiGe BiCMOS technology, for a transmit/receive (T/R) module of phased array radar systems. The high power and wideband performance was achieved by the integrated power amplifiers employing an active bias circuit and a series feedback technique. The fabricated multi-function chip with a compact size of 8.4 mm2 (3.5×2.4 mm) exhibits a transmit/receive gain of 30/20×dB and a P1dB of 18 dBm from 8 to 11 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit manufacture; microwave integrated circuits; phased array radar; power amplifiers; BiCMOS; SiGe; X-band high power multi-function chip; active bias circuit; frequency 8 GHz to 11 GHz; phased array radars; power amplifiers; series feedback technique; size 2.4 mm; size 3.5 mm; transmit/receive module;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.0703
