Title :
High-speed signal switching with a monolithic integrated p-i-n/amp/switch on indium phosphide
Author :
Seabury, C.W. ; Bylsma, R.B. ; Vella-Coleiro, G.P. ; Kim, S.J. ; Davisson, P.S. ; Yee, C.M.L. ; Eng, J. ; Deblis, D. ; Jeong, J. ; Jhee, Y.K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Operation of an optoelectronic integrated circuit which includes two p-i-n photodetectors, preamplifiers, a 2*2 crosspoint switch, and output buffers has been demonstrated. These circuits are fabricated in semi-insulating InP:Fe substrates by vapor-phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at approximately 1 GHz.<>
Keywords :
III-V semiconductors; field effect integrated circuits; indium compounds; integrated optoelectronics; iron; optical switches; p-i-n diodes; photodetectors; photodiodes; semiconductor switches; 1 GHz; 15 MHz; 150 MHz; III-V semiconductor; InP:Fe; crosspoint switch; high speed signal switching; integrated p-i-n/FET structure; ion implantation; monolithic integrated p-i-n/amp/switch; optoelectronic integrated circuit; output buffers; p-i-n photodetectors; planar horizontally integrated technology; preamplifiers; semi-insulating InP:Fe substrates; vapor-phase epitaxy; Epitaxial growth; Indium phosphide; Integrated circuit technology; Ion implantation; PIN photodiodes; Photodetectors; Preamplifiers; Substrates; Switches; Switching circuits;
Journal_Title :
Photonics Technology Letters, IEEE
