DocumentCode :
1518644
Title :
Driving spectral resolution to the noise limit in semiconductor gamma detector arrays
Author :
Lachish, Uri
Author_Institution :
Guma Sci., Rehovot, Israel
Volume :
48
Issue :
3
fYear :
2001
fDate :
6/1/2001 12:00:00 AM
Firstpage :
520
Lastpage :
523
Abstract :
Shape-time adjustment of a standard detector circuit improves the resolution of a single pixel of a detector array to the noise limit. The steady flow of gamma generated charge, in a detector bulk, induces fast signal build-up, as the charge arrives near a single pixel. The build-up period is shorter than the electron transition time from contact to contact. The circuit shape-time response is adjusted to overlap with the fast build-up period. The shape time determines a distance range, extending from the negative contact, where the detector signal does not depend on the position of photon absorption. The noise limited line width is consistent with published data of higher line resolution than predicted by the small pixel theory
Keywords :
gamma-ray detection; semiconductor counters; semiconductor device models; semiconductor device noise; noise limit; noise limited line width; semiconductor gamma detector arrays; shape time; spectral resolution; Circuit noise; Electrons; Gamma ray detection; Gamma ray detectors; Noise shaping; Semiconductor device noise; Sensor arrays; Shape; Signal generators; Signal resolution;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.940110
Filename :
940110
Link To Document :
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