Title :
A 9 mW, Q-Band Direct-Conversion I/Q Modulator in SiGe BiCMOS Process
Author :
Gupta, Arpit K. ; Kim, Joohwa ; Asbeck, Peter ; Buckwalter, James F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
fDate :
6/1/2012 12:00:00 AM
Abstract :
This letter demonstrates a low-power, Q-band, direct-conversion I/Q modulator. The modulator consumes 9 mW power from a 1 V supply and delivers - 9.3 dBm RF power at 39 GHz. The modulator exhibits an EVM of 5.3% for 16QAM at 3 Msymbols/s. The circuit is fabricated in 0.12 μm SiGe BiCMOS process and occupies an area of 1.5 mm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; digital-analogue conversion; field effect MIMIC; modulators; quadrature amplitude modulation; BiCMOS process; EVM; Q-band direct-conversion I-Q modulator; QAM; SiGe; digital-to-analog converters; frequency 39 GHz; power 9 mW; size 0.12 mum; voltage 1 V; Baseband; Mixers; Quadrature amplitude modulation; Radio frequency; Silicon germanium; System-on-a-chip; Direct conversion transmitter; I/Q modulator; Q-band;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2012.2197379
