Title :
A low-noise, low-power CMOS SOI readout front-end for silicon detector leakage current compensation with capability
Author :
Hu, Y. ; Deptuch, G. ; Turchetta, R. ; Guo, C.
Author_Institution :
Lab. d´´Electron. et de Physique des Syst. Instr., Univ. Louis Pasteur, Strasbourg, France
fDate :
8/1/2001 12:00:00 AM
Abstract :
A low-noise, low-power CMOS semiconductor on insulator (SOI) readout front-end aiming at dc coupling to silicon radiation detectors is presented in this paper. It is able to compensate the leakage current of detectors within a wide range up to 10 μA. While the presented solution does not significantly deteriorate the amplifier noise performance it complies with demands for low-noise readout system for silicon detectors. This front-end system includes a charge-sensitive amplifier, a semi-Gaussian CR-RC shaping amplifier and an output buffer. It has been simulated and implemented in a CMOS SOI-SIMOX process. For no leakage current, an input referred equivalent noise charge (ENC) of 426 electrons (rms) for 0 pF of detector capacitance with a noise slope of 40 electrons/pF, a peaking time of 50 ns, and a conversion gain of 23.4 mV/fC have been obtained
Keywords :
CMOS analogue integrated circuits; SIMOX; buffer circuits; integrated circuit noise; leakage currents; low-power electronics; nuclear electronics; readout electronics; silicon radiation detectors; 50 ns; SOI-SIMOX process; Si; amplifier noise performance; charge-sensitive amplifier; conversion gain; detector capacitance; input referred equivalent noise charge; leakage current compensation; low-noise ICs; low-power CMOS; noise slope; output buffer; peaking time; radiation detectors; readout front-end; semi-Gaussian CR-RC shaping amplifier; CMOS process; Electrons; Insulation; Leak detection; Leakage current; Low-noise amplifiers; Noise shaping; Semiconductor device noise; Silicon on insulator technology; Silicon radiation detectors;
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
