Title :
A monolithic Si PCS-CDMA power amplifier with 30% PAE at 1.9 GHz using a novel biasing scheme
Author :
Luo, Sifen ; Sowlati, Tirdad
Author_Institution :
Philips Lab., Briarcliff Manor, NY, USA
fDate :
9/1/2001 12:00:00 AM
Abstract :
A monolithic Si personal-communication system-CDMA power amplifier (PA) capable of delivering 28.2-dBm output power with 30% power-added efficiency and -45-dBc adjacent-channel-power ratio at 1.9 GHz and 3.6-V supply voltage is presented for the first time in this paper. The PA implemented in a 30-GHz BiCMOS process incorporates a novel impedance-controllable biasing scheme to control the class of operation and bias impedance of the output stage. Both simulated and measured results are presented for comparison
Keywords :
BiCMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; code division multiple access; mobile radio; 1.9 GHz; 3.6 V; 30 percent; BiCMOS process; RFIC; Si; adjacent-channel-power ratio; bias impedance control; mobile phone handset; monolithic Si PCS-CDMA power amplifier; output power; power-added efficiency; Capacitors; Impedance; Inductors; Multiaccess communication; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Telephone sets; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
