Design and fabrication of CPW to dielectric image-guide transitions at 60 GHz on SOI

Author

Basha, M. ; Biglarbegian, B. ; Gigoyan, S. ; Safavi-Naeini, S.

Author_Institution

Center for Nanotechnol., Zewail City of Sci. & Technol., Giza, Egypt

fYear

2014

fDate

19-23 Jan. 2014

Firstpage

196

Lastpage

198

Abstract

In this paper, a novel millimeter-wave dielectric image-guide to CPW transition has been designed and fabricated using micromachining fabrication techniques. The new provided technology uses high resistivity SOI wafer to implement a low loss dielectric image guides at the millimeter-wave range of frequencies. The coplanar waveguide is patterned with Aluminum over the dielectric image-guide. The measurement results are in good agreement with the simulation results and show that the insertion loss of the transition is 0.82 dB at 60 GHz.

Keywords

coplanar waveguides; dielectric waveguides; micromachining; millimetre wave devices; silicon-on-insulator; waveguide transitions; CPW; SOI; coplanar waveguide; dielectric image-guide transition; frequency 60 GHz; loss 0.82 dB; low loss dielectric image guide; micromachining fabrication technique; millimeter wave dielectric image-guide; silicon-on-insulator; Coplanar waveguides; Dielectric measurement; Dielectrics; Insertion loss; Optical waveguides; Waveguide transitions; 60 GHz band; CPW transition; Dielectric image waveguides; Micromachining; Millimeter wave; packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2014 IEEE

Conference_Location

Newport Beach, CA

Print_ISBN

978-1-4799-2298-7

Type

conf

DOI

10.1109/RWS.2014.6830159

Filename

6830159