• DocumentCode
    1521257
  • Title

    Characterisation of rhenium Schottky contacts on n-type Alx Fa1-xN

  • Author

    Zhou, L. ; Ping, A.T. ; Boutros, K. ; Redwing, J. ; Adesida, I.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • Volume
    35
  • Issue
    9
  • fYear
    1999
  • fDate
    4/29/1999 12:00:00 AM
  • Firstpage
    745
  • Lastpage
    746
  • Abstract
    The electrical characteristics of Re Schottky contacts on Alx Ga1-xN (x=0, 0.15, 0.22 and 0.26) grown by MOCVD on sapphire substrates have been investigated. The effective barrier heights were obtained from current-voltage and capacitance-voltage measurements and were found to increase with aluminium concentration
  • Keywords
    III-V semiconductors; MOCVD; Schottky barriers; aluminium compounds; characteristics measurement; gallium compounds; rhenium; semiconductor device measurement; MOCVD; Re-AlGaN; Schottky contacts; capacitance-voltage measurements; current-voltage measurements; effective barrier heights; electrical characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990489
  • Filename
    769865
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1521257