Title :
GaAs PHEMT with 1.6 W/mm output power density
Author :
Marsetz, W. ; Hulsmann, A. ; Kohler, K. ; Demmler, M. ; Schlechtweg, M.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
4/29/1999 12:00:00 AM
Abstract :
A very high power density GaAs pseudomorphic HEMT with a saturated output power density of 1.6 W/mm at 2 GHz is presented. To the authors´ knowledge this is the highest reported value for GaAs HEMTs. A transistor with 2.5 mm gate width delivers a saturated output power of 4 W. The PAE at saturation is 62%. The measurements are performed in CW mode on an unthinned GaAs wafer.
Keywords :
high electron mobility transistors; 2 GHz; 2.5 mm; 4 W; 62 percent; CW mode; GaAs; PAE; PHEMT; gate width; output power density; saturated output; unthinned wafer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990474
