• DocumentCode
    1521293
  • Title

    Implantation approach to SEU suppression in GaAs

  • Author

    Dietrich, H.B. ; Kang, Jin U. ; Frankel, Michael Y.

  • Author_Institution
    Naval Res. Lab., Washington, DC
  • Volume
    35
  • Issue
    9
  • fYear
    1999
  • fDate
    4/29/1999 12:00:00 AM
  • Firstpage
    751
  • Lastpage
    752
  • Abstract
    It is shown that oxygen-implanted GaAs with oxygen concentrations of 1020 cm-3 (or 1019 cm-3 if co-implanted with Al), annealed in the 500-850°C temperature range, can result in highly resistive layers with subpicosecond free-carrier lifetimes. It is suggested that such layers can be used to suppress single event upsets (SEUs) in GaAs digital circuits
  • Keywords
    III-V semiconductors; annealing; carrier lifetime; digital integrated circuits; gallium arsenide; ion implantation; oxygen; radiation hardening (electronics); 500 to 850 C; GaAs digital circuits; GaAs:O; SEU suppression; annealing; highly resistive layers; oxygen-implanted GaAs; single event upsets; subpicosecond free-carrier lifetimes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990512
  • Filename
    769870
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1521293