DocumentCode
152171
Title
Efficiency improvement of p-i-n solar cell by embedding quantum-dots
Author
Yi-Hsien Lin ; Jean-Fu Kiang
Author_Institution
Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2014
fDate
6-11 July 2014
Firstpage
135
Lastpage
135
Abstract
Conventional solar cells collect photons from the solar radiation in p-n junctions. Their efficiency is constrained by the Shockley-Queisser limit, due to blackbody radiation, spectral loss, excessive energy of the absorbed photons, and recombination loss. As of August 2013, the highest efficiency achieved by a single-junction solar cell, made of GaAs, is 28.8 %.
Keywords
semiconductor junctions; semiconductor quantum dots; solar cells; GaAs; Shockley-Queisser limit; blackbody radiation; efficiency 28.8 percent; embedding quantum-dots; p-i-n solar cells; p-n junctions; photons; recombination loss; single-junction solar cell; solar radiation; spectral loss; Educational institutions; Electronic mail; Photonic band gap; Photonics; Photovoltaic cells; Quantum dots; Solar radiation;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Science Meeting (Joint with AP-S Symposium), 2014 USNC-URSI
Conference_Location
Memphis, TN
Type
conf
DOI
10.1109/USNC-URSI.2014.6955517
Filename
6955517
Link To Document