Title :
Electrothermal characterisation of high power microwave silicon bipolar transistor
Author :
Bouysse, P. ; Quéré, R. ; Villotte, J.P. ; Carves-Bideaux, N. ; Coupat, J.M.
Author_Institution :
CNRS, IRCOM, France
fDate :
4/15/1999 12:00:00 AM
Abstract :
An original approach to extracting the thermal equivalent circuits of bipolar transistors is described. This work is based on specific pulsed, DC and thermal measurements that allow various thermal time constants effects to be separated. The proposed modelling method is applied to determine the thermal behaviour of a high power microwave silicon bipolar transistor
Keywords :
silicon; Si; Si bipolar transistor; electrothermal characterisation; high power bipolar transistor; modelling method; power microwave bipolar transistor; thermal equivalent circuit extraction; thermal time constants effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990473
