Title :
Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser
Author :
Chen, S.M. ; Zhou, K.J. ; Zhang, Zhenhua Yu ; Wada, O. ; Childs, D.T.D. ; Hugues, Maxime ; Jin, Xinzhe ; Hogg, R.A.
Author_Institution :
Dept. of Electron. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
A hybrid quantum well/quantum dot active region is used to obtain simultaneous three-state lasing at room temperature, via ground state and first excited state transitions of the quantum dots and the lowest energy transition of a single quantum well. The device exhibits a threshold current density of 1125 A/cm2 for achieving simultaneous three-state lasing over ~160~nm.
Keywords :
current density; quantum dot lasers; quantum well lasers; excited state transitions; ground state; hybrid quantum well-quantum dot laser; lowest energy transition; room temperature simultaneous three-state lasing; temperature 293 K to 298 K; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.0710
