Title :
High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz
Author :
Yuen, C. ; Nishimoto, C. ; Pao, Y.C. ; Day, M. ; Bandy, S. ; Zdasiuk, G.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
Ultra-broad-bandwidth distributed amplifiers with cutoff frequencies of 45 and 60 GHz have been developed utilizing 0.25-μm AlGaAs and InP cascode HEMTs (high electron mobility transistors) with a mushroom gate profile. A measured gain a high as 10±1 dB from 5 to 50 GHz and a gain of 8±1 dB from 5 to 60 GHz have been achieved from amplifiers using AlGaAs HEMTs. Amplifiers fabricated on InP HEMT material have demonstrated a gain of 15±1 dB from 5 to 50 GHz and 12±1 dB from 5 to 60 GHz. The measured noise figure for these amplifiers is approximately 2.5-4 dB in the Ka-band. The measured P1 dB is around 12.5 dBm at 40 GHz. The chip size is 2.3×0.9 mm2
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; linear integrated circuits; microwave amplifiers; wideband amplifiers; 0.25 micron; 2.5 to 4 dB; 5 to 60 GHz; 8 to 15 dB; AlGaAs; EHF; InP; Ka-band; LNA; MM-wave operation; MMIC; SHF; cascode HEMTs; high electron mobility transistors; high gain type; low-noise; monolithic HEMT distributed amplifiers; mushroom gate profile; ultra broadband type; Circuits; Cutoff frequency; Distributed amplifiers; Frequency measurement; Gain measurement; HEMTs; Indium phosphide; Noise figure; Noise measurement; Semiconductor device measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
