DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-μm technology

Author

Okhonin, Serguei ; Py, Marcel A. ; Georgescu, Bogdan ; Fischer, Herman ; Risch, Lothar

Author_Institution

Inst. for Micro- and Optoelectron., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

Volume

46

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1514

Lastpage

1517

Abstract

The impact of hole confinement on the DC and low frequency noise in SiGe p-channel FETs is investigated by comparison with Si p-FETs produced by the same technology. The relative spectral power density of low frequency (1/f) noise in SiGe pFETs is found to be significantly lower than in Si devices. This is mainly attributed to the physical separation of the holes confined in the SiGe channel from the Si/SiO₂ interface. The low value of SiGe channel noise proves the good quality of epilayers and heterointerfaces, as also revealed by the TEM cross section

Keywords

1/f noise; CMOS integrated circuits; Ge-Si alloys; MOSFET; integrated circuit noise; quantum well devices; semiconductor device measurement; semiconductor device noise; semiconductor materials; semiconductor-insulator boundaries; 0.13 micron; 1/f noise; CMOS technology; DC characteristics; LF noise characteristics; Si; Si-SiO₂-Si-SiGe-Si; SiGe channel noise; SiGe p-channel FET; SiGe quantum well; hole confinement; low-frequency noise; p-FET; relative spectral power density; CMOS technology; FETs; Frequency; Germanium silicon alloys; Low-frequency noise; Oxidation; Performance evaluation; Semiconductor device doping; Semiconductor device noise; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.772504

Filename

772504