DocumentCode :
1527849
Title :
Series Resistance Extraction in Poly-Si TFTs With Channel Length and Mobility Variations
Author :
Zhou, Yan ; Wang, Mingxiang ; Wong, Man
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou, China
Volume :
32
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
901
Lastpage :
903
Abstract :
A new method to extract the series resistance (Rs) of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is proposed. Different from conventional methods, this method is based on an analytical poly-Si TFT model and is insensitive to channel length and mobility variations. This method is demonstrated in both n- and p-type poly-Si TFTs.
Keywords :
thin film transistors; channel length; mobility variation; n-type poly-Si TFT; p-type poly-Si TFT; polycrystalline silicon thin-film transistor; series resistance extraction; Logic gates; MOSFETs; Resistance; Silicon; Thin film transistors; Polycrystalline silicon (poly-Si); series resistance; thin-film transistors (TFTs);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2142391
Filename :
5776654
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1527849
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