DocumentCode :
1530009
Title :
Stacking faults and their effect on magnetocrystalline anisotropy in Co and Co-alloy thin films
Author :
Bian, Bo ; Yang, Wei ; Laughlin, David E. ; Lambeth, David N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume :
37
Issue :
4
fYear :
2001
fDate :
7/1/2001 12:00:00 AM
Firstpage :
1456
Lastpage :
1458
Abstract :
Stacking faults in (101¯0) unicrystal Co and Co-alloy thin films have been analyzed by the electron diffraction technique. As predicted no diffraction contrast of stacking faults could be observed when the beam is parallel to the [101¯0] direction. However, both by plan-view TEM observation and electron diffraction along the [112¯0] direction reveal that the stacking fault density in biased pore Co (101¯0) Bin films is much lower than that in unbiased ones. The addition of Cr in Co films significantly reduces stacking fault density whereas the addition of 8 at% Pt leads to a considerable increase in stacking fault density. Our results show that stacking faults in Co thin films significantly, and negatively, affect the anisotropy energy density and its temperature dependence
Keywords :
alloying additions; cobalt; cobalt alloys; electron diffraction; ferromagnetic materials; magnetic anisotropy; magnetic recording; magnetic thin films; metallic thin films; stacking faults; transmission electron microscopy; Co; Co-Cr; Co-Pt; anisotropy energy density; biased films; electron diffraction; magnetocrystalline anisotropy; plan-view TEM; recording media; single crystal thin films; stacking fault density; stacking faults effect; temperature dependence; Anisotropic magnetoresistance; Chromium; Diffraction; Electrons; Magnetic analysis; Magnetic anisotropy; Perpendicular magnetic anisotropy; Stacking; Temperature dependence; Transistors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.950869
Filename :
950869
Link To Document :
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