Title :
Noise characterization of a mode-locked InGaAsP semiconductor diode laser
Author :
Burns, D. ; Finch, A. ; Sleat, W. ; Sibbett, W.
Author_Institution :
Dept. of Phys. & Astron., St. Andrews Univ., UK
fDate :
11/1/1990 12:00:00 AM
Abstract :
Noise measurements were made on an InGaAsP semiconductor diode laser by monitoring and analyzing the mode-locked pulse train power spectrum. The noise content of the mode-locking RF source was observed to be transferred directly to the laser pulse train and, thus, careful selection of the drive oscillator is essential. Amplification of the laser pulses by an erbium-fiber amplifier did not lead to any increase in timing jitter and the additional amplitude noise present could be removed by using a more compatible pump source such as a diode laser operating at either 980 or 1490 nm
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; gallium compounds; indium compounds; laser mode locking; semiconductor junction lasers; Er fiber amplifier; III-V semiconductor; amplitude noise; drive oscillator; laser pulses; mode locked InGaAsP semiconductor diode laser; mode-locked pulse train power spectrum; mode-locking RF source; noise content; pump source; timing jitter; Laser mode locking; Laser noise; Noise measurement; Optical pulses; Power lasers; Pulse amplifiers; Pump lasers; Semiconductor device noise; Semiconductor diodes; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
