DocumentCode :
1531863
Title :
FeTaN/IrMn exchange-coupled multilayer films as soft underlayers for perpendicular media
Author :
Jung, H.S. ; Doyle, W.D.
Author_Institution :
Center for Mater. for Inf. Technol., Alabama Univ., Tuscaloosa, AL, USA
Volume :
37
Issue :
4
fYear :
2001
fDate :
7/1/2001 12:00:00 AM
Firstpage :
2294
Lastpage :
2297
Abstract :
Soft underlayers of FeTaN/IrMn exchange-coupled films for perpendicular media have been investigated. FeTaN(tFeTaN)/IrMn (10 nm) multilayer films having different FeTaN thicknesses tFeTaN from 20 nm to 200 nm were prepared while keeping the total FeTaN thickness at 200 nm. When tFeTnN decreased below 100 nm to 20 mn, the exchange bias field increased from 3.6 Oe to 77 Oe, and the pinning field from 25 Oe to 105 Oe. The interfacial exchange energy, J, was 0.10~0.13 ergs/cm2. As the exchange bias field increased, the angular reversibility increased from 10° to 57° in good agreement with the coherent rotational model. Radially oriented multilayer films of FeTaN (20 nm)/[IrMn(10 nm)/FeTaN(20 nm)]9 were successfully prepared on 65 mm disks and showed excellent angular reversibility, a pinning field >70 Oe, and a permeability of 70 up to 2 GHz
Keywords :
exchange interactions (electron); ferromagnetic materials; iridium alloys; iron alloys; magnetic multilayers; magnetic permeability; perpendicular magnetic recording; surface energy; tantalum alloys; 10 nm; 20 to 200 nm; 65 mm; FeTaN-IrMn; angular reversibility; coherent rotational model; exchange bias field; exchange-coupled multilayer films; interfacial exchange energy; permeability; perpendicular media; pinning field; radially oriented multilayer films; soft underlayers; Coercive force; Information technology; Magnetic fields; Magnetic films; Magnetic flux; Magnetic multilayers; Nonhomogeneous media; Permeability; Saturation magnetization; Temperature;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.951152
Filename :
951152
Link To Document :
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