• DocumentCode
    1532476
  • Title

    CMOS symmetric trace differential stacked spiral inductor

  • Author

    Kim, Jung-Ho ; Kim, Heonhwan

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hanyang Univ., Seoul, South Korea
  • Volume
    46
  • Issue
    14
  • fYear
    2010
  • fDate
    7/1/2010 12:00:00 AM
  • Firstpage
    1005
  • Lastpage
    1006
  • Abstract
    A miniature silicon-based symmetric trace differential stacked spiral inductor (SDSSI) has been implemented using standard 0.18 μm CMOS technology. Based on the measured two-port S-parameter using a standard de-embedding procedure, the self-resonance frequency (fsr) and quality factor (Q) of the SDSSI were compared to a conventional differential stacked spiral inductor (DSSI). The fsr of the SDSSI was nearly 2.5 times higher than that of the DSSI, and the Q value of the SDSSI was also enhanced.
  • Keywords
    CMOS integrated circuits; Q-factor; S-parameters; inductors; silicon; CMOS symmetric trace differential stacked spiral inductor; Si; deembedding procedure; miniature silicon; quality factor; self-resonance frequency; size 1.8 mum; two-port S-parameter;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.1234
  • Filename
    5507616
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1532476