A temperature-dependent DC model for quarter-micron LDD pMOSFET´s operating in a Bi-MOS structure

Author

Chew, Kok Wai ; Rofail, Samir S. ; Yeo, Kiat Seng

Author_Institution

Chartered Semicond. Manuf. Ltd., Singapore

Volume

46

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1672

Lastpage

1684

Abstract

A temperature-dependent analytical model for deep submicrometer LDD p-channel devices operating in a Bi-MOS structure is reported for the first time. This model is based on experimental data obtained from 0.25-μm process wafers with a wide range of technologies (0.25-1.0 μm). The measurements have been performed within the temperature range 223-398 K (-50°C to +125°C). The model accounts for the effects of independently biasing the source, drain, gate and body potentials, scaling, and the influence of temperature on the threshold voltage and the device currents. The effect of temperature on the device transconductance and the output conductance have also been examined. The results revealed that close agreement between the analytical model and the experimental has been achieved. Comparisons between the principal MOS current and the lateral bipolar current have been made to demonstrate the improvement of the latter with temperature for the quarter-micron devices

Keywords

MOSFET; semiconductor device models; -50 to 125 C; 0.25 micron; 223 to 398 K; Bi-MOS structure; MOS current; analytical model; lateral bipolar current; output conductance; quarter-micron LDD pMOSFET; short channel effect; temperature-dependent DC model; threshold voltage; transconductance; Analytical models; Fitting; MOSFET circuits; Semiconductor device modeling; Semiconductor process modeling; Silicon; Space charge; Temperature distribution; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.777156

Filename

777156