DocumentCode
1532976
Title
Modeling and simulation of single- and multiple-gate 2D MESFETs
Author
Iníguez, Benjamín ; Lü, Jian-Qiang ; Hurt, Michael J. ; Peatman, William C B ; Shur, Michael S.
Author_Institution
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
46
Issue
8
fYear
1999
fDate
8/1/1999 12:00:00 AM
Firstpage
1742
Lastpage
1748
Abstract
We describe a physically based model for a two-dimensional (2D) MESFET, a novel hetero-dimensional transistor. The model is valid for a “single” gate in which the sidewall contacts are biased together, a dual-gate configuration in which the gates are biased independently, and a multiple-gate configuration for three or more side gates. The model has been implemented in the circuit simulator AIM-SPICE. The modeling results are in good agreement with the experimental data
Keywords
SPICE; Schottky gate field effect transistors; semiconductor device models; two-dimensional electron gas; AIM-SPICE; circuit simulator; dual-gate configuration; hetero-dimensional transistor; multiple-gate 2D MESFETs; multiple-gate configuration; physically based model; sidewall contacts; Circuit simulation; Digital circuits; Electrons; Geometry; MESFET circuits; Physics; Semiconductor devices; Solid modeling; Systems engineering and theory; Wire;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.777165
Filename
777165
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