DocumentCode :
1534503
Title :
Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature
Author :
Onishi, Teruo ; Imafuji, Osamu ; Nagamatsu, Ken ; Kawaguchi, Masashi ; Yamanaka, Keiji ; Takigawa, S.
Author_Institution :
Panasonic Corporation, Kyoto, Japan
Volume :
48
Issue :
9
fYear :
2012
Firstpage :
1107
Lastpage :
1112
Abstract :
We report on continuous wave lasing characteristics of GaN vertical cavity surface emitting lasers (VCSELs). The VCSEL operates at room temperature under current injection by using highly reflective distributed Bragg reflectors (DBRs) made up of transparent {\\rm ZrO}_{2} and {\\rm SiO}_{2} film stacks. Together with high reflectivity and the wide stop band of the DBR, the long cavity of 6 \\mu{\\rm m} allows multimode lasing oscillation with narrow mode spacing of 2.9 nm. In addition, a short cavity structure of 2 \\mu{\\rm m} is fabricated and shows quasi-single mode operation. The spacing of the lasing modes shows a clear dependence of the actual cavity lengths with fairly good agreement to theory taking account of the refractive index dispersion.
Keywords :
Cavity resonators; Distributed Bragg reflectors; Gallium nitride; Optical device fabrication; Vertical cavity surface emitting lasers; Distributed Bragg reflectors (DBRs); GaN; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs);
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2012.2203586
Filename :
6213472
Link To Document :
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