Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

Author

Deal, William R. ; Leong, K. ; Radisic, V. ; Sarkozy, S. ; Gorospe, B. ; Lee, J. ; Liu, P.H. ; Yoshida, W. ; Zhou, J. ; Lange, M. ; Lai, R. ; Mei, X.B.

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA, USA

Volume

21

Issue

7

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

368

Lastpage

370

Abstract

In this letter, low noise amplification at 0.67 THz is demonstrated for the first time. A packaged InP High Electron Mobility Transistor (HEMT) amplifier is reported to achieve a noise figure of 13 dB with an associated gain greater than 7 dB at 670 GHz using a high f_MAX InP HEMT transistors in a 5 stage coplanar waveguide integrated circuit. A 10-stage version is also reported to reach a peak gain of 30 dB. These results indicate that InP HEMT integrated circuits can be useful at frequencies approaching a terahertz.

Keywords

HEMT integrated circuits; III-V semiconductors; coplanar waveguides; field effect MIMIC; field effect analogue integrated circuits; indium compounds; low noise amplifiers; submillimetre wave amplifiers; terahertz wave devices; HEMT amplifier; HEMT integrated circuit; HEMT transistor; InP; coplanar waveguide integrated circuit; frequency 0.67 THz; high electron mobility transistor amplifier; low noise amplification; size 30 nm; Coplanar waveguides; Gain; HEMTs; Indium phosphide; MODFETs; Noise measurement; Transmission line measurements; Coplanar waveguide (CPW); high electron mobility transistor (HEMT); low noise amplifier (LNA); millimeter-wave (MM-Wave); monolithic microwave integrated circuit (MMIC); sub-millimeter wave;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2143701

Filename

5784355