Conduction Mechanism of Se Schottky Contact to n-Type Ge

Author

Janardhanam, V. ; Park, Yang-Kyu ; Yun, Hyung-Joong ; Ahn, Kwang-Soon ; Choi, Chel-Jong

Author_Institution

Semicond. Phys. Res. Center, Chonbuk Nat. Univ., Jeonju, South Korea

Volume

33

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

949

Lastpage

951

Abstract

The conduction mechanism of Se/n-type-Ge Schottky diodes is investigated using temperature-dependent current-voltage (I- V) characteristics. The presence of microscopic inhomogeneity at the Se/Ge interface could be the primary cause of the differences between the barrier heights measured from the I-V and capacitance-voltage (C-V ) characteristics. The position of the quasi-Fermi level suggested the dominance of thermionic emission in the forward bias region. The electric field dependence of the reverse current revealed that Schottky emission, along with the generation mechanism, has dominance over the current conduction in the reverse bias region.

Keywords

Fermi level; Schottky barriers; Schottky diodes; elemental semiconductors; germanium; selenium; thermionic emission; I-V characteristics; Schottky contact; Schottky diodes; Schottky emission; Se-Ge; capacitance-voltage characteristics; current conduction mechanism; electric field dependence; forward bias region; generation mechanism; microscopic inhomogeneity; quasiFermi level; reverse current; temperature-dependent current-voltage characteristics; thermionic emission; Doping; Metals; Schottky barriers; Schottky diodes; Temperature; Temperature measurement; Thermionic emission; Germanium; Schottky diodes; semiconductor–metal interfaces; thermionic emission;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2196750

Filename

6213485