Title :
High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in nor-Type Flash Memory
Author :
Wang, Kuan-Ti ; Chao, Tien-Sheng ; Wu, Woei-Cherng ; Yang, Wen-Luh ; Lee, Chien-Hsing ; Hsieh, Tsung-Min ; Liou, Jhyy-Cheng ; Wang, Shen-De ; Chen, Tzu-Ping ; Chen, Chien-Hung ; Lin, Chih-Hung ; Chen, Hwi-Huang
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
For the first time, a high-performance (τPGM = 200 ns/τERS = 5 ms) cell with superior reliability characteristics is demonstrated in a nor-type architecture, using dynamic-threshold source-side injection (DTSSI) in a wrapped select-gate silicon-oxide-nitride-oxide-silicon memory device, with multilevel and 2-bit/cell operation. Using DTSSI enables easy extraction of the multilevel states with a tight VTH distribution, a nearly negligible second-bit effect, superior endurance characteristics, and good data retention.
Keywords :
NOR circuits; circuit reliability; flash memories; 2-bit-cell; NOR-type flash memory; dynamic-threshold source-side injection; high-reliability dynamic-threshold source-side injection; multilevel states in a cell; silicon-oxide-nitride-oxide-silicon memory device; wrapped select-gate SONOS; Chaos; Councils; Data mining; Energy consumption; Flash memory; Helium; Nonvolatile memory; Programming profession; SONOS devices; Silicon; nor; Flash memory; multilevel states in a cell (MLC); silicon–oxide–nitride–oxide–silicon (SONOS);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2054530
