Title :
MOVPE regrowth of semi-insulating InP around reactive ion etched laser mesas
Author :
Nordell, N. ; Borglind, J. ; Kjebon, O. ; Lourdudoss, Sebastian
Author_Institution :
Swedish Inst. of Microelectron., Kista, Sweden
fDate :
5/23/1991 12:00:00 AM
Abstract :
Semi-insulating iron doped InP was grown with MOVPE around reactive ion etched laser mesas without using any wet etchant to optimise the mesa shape or to form a mask overhang. To achieve good planarity and selectivity, growth was performed at high temperature and low pressure. The resulting 3 dB modulation bandwidth of the buried heterostructure laser was 7.9 GHz at 10.5 mW.
Keywords :
III-V semiconductors; indium compounds; iron; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; sputter etching; vapour phase epitaxial growth; 10.5 mW; 3 dB modulation bandwidth; 7.9 GHz; III-V semiconductors; InP:Fe; MOVPE; buried heterostructure laser; mesa shape; planarity; pressure; reactive ion etched laser mesas; selectivity; temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910579
