DocumentCode :
1537078
Title :
A Compact CMOS Compatible Oxide Antifuse With Polysilicon Diode Driver
Author :
He, Jin ; Chan, Wan Tim ; Wang, Cheng ; Lou, Haijun ; Wang, Ruonan ; Li, Lin ; Liang, Hailang ; Wu, Wen ; Ye, Yun ; Ma, Yutao ; Chen, Qin ; He, Xiaomeng ; Chan, Mansun
Author_Institution :
School of Electronic Engineering and Computer Science, Peking University, Beijing, China
Volume :
59
Issue :
9
fYear :
2012
Firstpage :
2539
Lastpage :
2541
Abstract :
A very compact one-time-programmable memory consisting of an oxide antifuse and a polysilicon diode driver is proposed in this brief. The memory cell is constructed using a standard CMOS process without any additional masks to reduce the fabrication cost. The design method to achieve the required performance of various components is presented in detail. The technology has been demonstrated with a fabricated chip from a standard 0.18- 
CMOS TSMC technology.
Keywords :
Arrays; CMOS integrated circuits; CMOS process; Fuses; Logic gates; Programming; Standards; Diode array; nonvolatile memory; one-time-programmable (OTP) memory; polysilicon diode driver;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2201941
Filename :
6215030
Link To Document :
