DC and microwave noise transient behavior of InP/InGaAs double heterojunction bipolar transistor (DHBT) with polyimide passivation

Author

Zhong Xiong, Yong ; Ng, Geok-Ing ; Wang, Hong ; Fu, J.S.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2192

Lastpage

2197

Abstract

DC and microwave noise transient behavior of InP/InGaAs double heterojunction bipolar transistor (DHBT) with polyimide passivation is reported in this paper for the first time. The base transient current is believed to be due to the change of surface potential near the base-emitter junction perimeter at the polyimide/emitter interface resulting from a decrease in the amount of trapped electrons in the polyimide. We also find that the surface potential on the sidewall of collector-emitter affected by the charge trapping and detrapping in polyimide may induce a parasitic polyimide field effect transistor along the surface of the base-collector junction which results in an excess collector transient current. These base and collector current transients result in associated transient of broadband shot noise. The time dependence of microwave noise figures due to the excess transients is also investigated. The better understanding of the mechanisms of the noise transient behavior of the InP HBT device is very useful to improve the device and circuit reliability

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; passivation; semiconductor device noise; semiconductor device reliability; shot noise; surface potential; transients; DC transient behavior; InP-InGaAs; base transient current; base-collector junction; base-emitter junction perimeter; broadband shot noise; double heterojunction bipolar transistor; excess collector transient current; microwave noise figures; microwave noise transient behavior; polyimide passivation; reliability; surface potential; trapped electrons; Circuit noise; DH-HEMTs; Double heterojunction bipolar transistors; Electron emission; Electron traps; FETs; Indium gallium arsenide; Indium phosphide; Passivation; Polyimides;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954453

Filename

954453