Title :
46 Gbit/s super-dynamic decision circuit module using InAlAs/InGaAs HEMTs
Author :
Yoneyama, M. ; Otsuji, T. ; Imai, Y. ; Yamaguchi, S. ; Enoki, T. ; Umeda, Y. ; Hagimoto, K.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
8/14/1997 12:00:00 AM
Abstract :
The authors describe a 46 Gbits super-dynamic type decision circuit module that uses InAlAs/InGaAs HEMTs. At a data rate of 40 Gbit/s, the module shows an input data sensitivity of 104 mVpp and a clock phase margin of 212
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; decision circuits; field effect digital integrated circuits; gallium arsenide; indium compounds; optical communication equipment; time division multiplexing; 0.1 micron; 40 to 46 Gbit/s; HEMT IC; InAlAs-InGaAs; TDM fibre-optic communication; clock phase margin; input data sensitivity; super-dynamic decision circuit module;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971007
