Title :
Tunable resonant cavity enhanced photodetectors with GaInAsSb/AlGaAsSb multiple quantum well structure grown by molecular beam epitaxy
Author :
Shi, Yan ; Zhao, Jian H. ; Sarathy, Jiten ; Olsen, G.H. ; Lee, Hao
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
8/14/1997 12:00:00 AM
Abstract :
Tunable resonant cavity enhanced photodetectors based on a GaInAsSb/AlGaAsSb multiple quantum well structure grown by molecular beam epitaxy have been successfully demonstrated. A tuning range of 20 nm is realised at 110 K with a reverse bias voltage of 8 V, and the quantum efficiency is enhanced by the cavity to reach 20%, compared to ~1% for a non-resonant photodetector of similar structure
Keywords :
gallium compounds; 110 K; 20 percent; 8 V; GaInAsSb-AlGaAsSb; MBE; MQW structure; molecular beam epitaxy; multiple quantum well structure; resonant cavity enhanced photodetectors; tunable photodetectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970976
