DocumentCode :
1539006
Title :
Readout circuit in active pixel sensors in amorphous silicon technology
Author :
Karim, Karim S. ; Nathan, Arokia
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume :
22
Issue :
10
fYear :
2001
Firstpage :
469
Lastpage :
471
Abstract :
The most widely used architecture in large area amorphous silicon (a-Si) flat panel imagers is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the PPS has the advantage of being compact and amenable toward high-resolution imaging, reading small PPS output signals requires external circuitry such as column charge amplifiers that produce additional noise and reduce the minimum readable sensor input signal. This work presents a current mode amorphous silicon active pixel that performs on-pixel amplification of noise-vulnerable sensor input signals to minimize the effect of external readout noise sources associated with "off-chip" charge amplifiers. Preliminary results indicate excellent small signal linearity along with a high and programmable charge gain.
Keywords :
CMOS image sensors; amorphous semiconductors; elemental semiconductors; readout electronics; silicon; thin film transistors; Si; active pixel sensors; amorphous silicon technology; column charge amplifiers; external readout noise sources; flat panel imagers; high-resolution imaging; noise-vulnerable sensor input signals; on-pixel amplification; passive pixel sensor; programmable charge gain; readable sensor input signal; readout circuit; readout switch; small signal linearity; Active noise reduction; Amorphous silicon; Charge-coupled image sensors; Circuit noise; Detectors; High-resolution imaging; Image sensors; Noise reduction; Pixel; Switches;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.954914
Filename :
954914
Link To Document :
بازگشت