• DocumentCode
    1539926
  • Title

    Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor

  • Author

    Lareau, R.D. ; Friedman, L. ; Soref, Richard A.

  • Author_Institution
    Dept. of Electr. Eng., Worcester Polytech. Inst., MA, USA
  • Volume
    26
  • Issue
    20
  • fYear
    1990
  • Firstpage
    1653
  • Lastpage
    1655
  • Abstract
    Optical phase-and-amplitude modulation at 1.55 mu m in an electro-optic guided-wave Si/Ge0.2Si0.8/Si HBT is investigated using computer-aided modelling and simulation. At an injection of 1019 electrons per cm3, an intensity modulation of 10 dB is predicted for an active length of 390 mu m.
  • Keywords
    Ge-Si alloys; electro-optical devices; heterojunction bipolar transistors; optical communication equipment; optical modulation; optical waveguide components; semiconductor device models; semiconductor junctions; 1.55 micron; active length; computer-aided modelling; heterojunction bipolar transistor; intensity modulation; phase-and-amplitude modulation; waveguided electrooptic intensity modulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901059
  • Filename
    58161
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1539926