DocumentCode
1539937
Title
High speed electron-beam testing of VLSI circuits by backscattered electron detection
Author
Khursheed, A.
Author_Institution
Dept. of Electr. Eng., Edinburgh Univ., UK
Volume
26
Issue
20
fYear
1990
Firstpage
1657
Lastpage
1658
Abstract
A scheme which is predicted to increase the time resolution of electron beam testers by more than an order of magnitude to a value of around 400 fs is described. The new proposal is based on using multi-channel angular backscattered detection which can be used in conjunction with the normal operating mode of electron beam testers.
Keywords
VLSI; electron beam applications; integrated circuit testing; particle backscattering; scanning electron microscopy; voltage measurement; IC testing; backscattered electron detection; electron beam testers; electron-beam testing of VLSI circuits; high speed testing; multi-channel angular backscattered detection; time resolution; voltage contrast;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901061
Filename
58163
Link To Document