DocumentCode
1539976
Title
Room temperature continuous wave operation of GaInP/AlInP visible-light laser with GaInP/AlInP superlattice confinement layer grown by gas source molecular beam epitaxy
Author
Kikuchi, A. ; Kaneko, Yuya ; Nomura, I. ; Kishino, Katsumi
Author_Institution
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Volume
26
Issue
20
fYear
1990
Firstpage
1668
Lastpage
1670
Abstract
A remarkable threshold current density reduction (from 3.5 kA/cm2 to 1.6 kA/cm2) of GaInP/AlInP visible light lasers grown by gas source molecular beam epitaxy (GS-MBE) was obtained by introducing 50 pairs of GaInP(7.1 AA)/AlInP(7.1 AA) short period superlattice confinement (SLC) layers. As a result, the room temperature continuous wave (CW) operation was obtained at 669 nm with a minimum threshold current of 50 mA and maximum light output of 10.5 mW.
Keywords
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor superlattices; 10.5 mW; 30 C; 50 mA; 669 nm; 7.1 A; GS-MBE; GaInP-AlInP; SLC; gas source molecular beam epitaxy; maximum light output; room temperature CW operation; semiconductors; superlattice confinement layer; threshold current; threshold current density reduction; visible-light laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901068
Filename
58170
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