Title :
Reduced Droop Effect in Nitride Light Emitting Diodes With Taper-Shaped Electron Blocking Layer
Author :
Chao Liu ; Zhiwei Ren ; Xin Chen ; Bijun Zhao ; Xingfu Wang ; Shuti Li
Author_Institution :
Lab. of Nano-Photonic Functional Mater. & Devices, South China Normal Univ., Guangzhou, China
Abstract :
A taper-shaped AlGaN electron blocking layer (TEBL) has been designed and incorporated in InGaN/GaN light emitting diodes (LEDs) to promote hole injection and electron confinement under high current injection conditions. Fabricated LEDs with a TEBL exhibit reduced operating voltage, enhanced efficiency as well as alleviated droop effect, compared with those with a conventional bulk AlGaN EBL. The improvement is due to improved electron confinement and hole transportation as well as decreased electrostatic fields in the active region.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; light sources; optical fabrication; optical materials; AlGaN; InGaN-GaN; InGaN/GaN light emitting diodes; LED fabrication; TEBL; active region; alleviated droop effect; conventional bulk AlGaN EBL; electrostatic fields; enhanced efficiency; high current injection condition; hole injection; hole transportation; improved electron confinement; nitride light emitting diodes; reduced droop effect; reduced operating voltage; taper-shaped AlGaN electron blocking layer; Aluminum gallium nitride; Charge carrier processes; Color; Gallium nitride; Light emitting diodes; Quantum well devices; Radiative recombination; Electron blocking layer; efficiency droop; light emitting diodes;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2325598
