DocumentCode
1541095
Title
Depth and width measurement simulation of semiconductor trench by optical wave irradiation
Author
Shirasaki, Hirokimi
Author_Institution
Tamagawa Univ., Machida, Japan
Volume
33
Issue
2
fYear
1997
fDate
3/1/1997 12:00:00 AM
Firstpage
1428
Lastpage
1431
Abstract
The scattering properties by two dimensional Gaussian beam irradiation to a semiconductor square trench are analyzed by the boundary element method. Then, the scattering properties depending on differences of polarization of light, the permittivity and so on, and the limit of the trench width and depth measurements are investigated numerically
Keywords
boundary-elements methods; interference spectroscopy; light polarisation; light scattering; permittivity; semiconductor process modelling; spatial variables measurement; spectroscopy; boundary element method; delay properties; depth measurement simulation; interference spectroscopy; light polarization; optical wave irradiation; permittivity; scattering properties; semiconductor square trench; semiconductor trench; trench width limit; two dimensional Gaussian beam irradiation; width measurement simulation; Boundary conditions; Boundary element methods; Conductors; Dielectric substrates; Equations; Light scattering; Optical scattering; Permittivity measurement; Polarization; Wavelength measurement;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.582525
Filename
582525
Link To Document