High speed voltage follower for standard BiCMOS technology

Author

Barthélemy, Hervé ; Kussener, Edith

Author_Institution

Lab. L2MP, CNRS, Marseille, France

Volume

48

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

727

Lastpage

732

Abstract

A new wideband low-distortion class A unitary gain voltage follower is presented in this brief. Based on a Gilbert´s translinear loop of four transistors, the proposed topology only includes high frequency n-p-n transistors in signal paths. The circuit has been simulated under ±1.5 V using the 0.8-μm BiCMOS technology from AMS. Simulation results confirm low output distortion and high frequency operation performances. For a total power consumption of only 3 mW, the -3-dB bandwidth of the voltage transfer function is higher than 2.5 GHz with a 1-kΩ loading resistance. The corresponding total harmonic distortion rate is lower than 0.06% when a 100-mV peak-to-peak input sinusoidal voltage is applied

Keywords

BiCMOS analogue integrated circuits; current conveyors; harmonic distortion; high-speed integrated circuits; operational amplifiers; transfer functions; -1.5 to 1.5 V; 0.8 micron; 3 mW; AMS; Gilbert´s translinear loop; class A unitary gain voltage follower; high frequency operation; high speed voltage follower; loading resistance; output distortion; peak-to-peak input sinusoidal voltage; signal paths; standard BiCMOS technology; total harmonic distortion rate; total power consumption; voltage transfer function; Bandwidth; BiCMOS integrated circuits; Circuit simulation; Circuit topology; Energy consumption; Frequency; Total harmonic distortion; Transfer functions; Voltage; Wideband;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/82.958343

Filename

958343