Title :
Novel method for fabricating deep submicron Nb/AlO/sub x//Nb tunnel junctions based on spin-on glass planarization
Author :
Pavolotsky, A.B. ; Weimann, T. ; Scherer, H. ; Niemeyer, J. ; Zorin, A.B. ; Krupenin, V.A.
Author_Institution :
Phys. Tech. Bundesanstalt, Braunschweig, Germany
fDate :
6/1/1999 12:00:00 AM
Abstract :
A novel method for the fabrication of sub-1-/spl mu/m Nb/AlO/sub x//Nb tunnel junctions has been developed, that is based on spin-on glass planarization. The Nb/AlO/sub x//Nb sandwich and the Nb wiring layer are structured by reactive ion etching using e-beam lithography. The insulation between the base electrode and the wiring layer is realized by planarised spin-on glass. Single electron transistors with junction areas of 0.3 /spl mu/m/spl times/0.3 /spl mu/m and linear arrays of junctions with sizes down to 0.5 /spl mu/m/spl times/0.5 /spl mu/m have been fabricated and measured.
Keywords :
Josephson effect; aluminium compounds; niobium; single electron transistors; superconducting arrays; superconducting transistors; surface treatment; Nb-AlO-Nb; deep submicron Nb/AlO/sub x//Nb tunnel junction; electron beam lithography; fabrication; linear array; reactive ion etching; single electron transistor; spin-on-glass planarization; Electrodes; Etching; Fabrication; Glass; Insulation; Lithography; Niobium; Planarization; Single electron transistors; Wiring;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
