Sub-10-nm-wide intercalated multi-layer graphene interconnects with low resistivity

We fabricated sub-10-nm-wide intercalated multi-layer graphene (MLG) interconnects and demonstrated a resistivity lower than that of cupper (Cu) interconnects with similar dimensions. The high-quality MLG was synthesized epitaxially by chemical vapor deposition on an epitaxial cobalt film, and intercalated with FeCl₃. After narrowing down the width to 8 nm by electron beam lithography, the 8-nm-wide intercalated MLG exhibited a resistivity of 3.2 μΩcm, which is predicted to be lower than that of Cu interconnects with the same dimensions. Our results show that intercalated MLG is really promising for future LSI interconnects.