DocumentCode :
1542530
Title :
A p-well GaAs MESFET technology for mixed-mode applications
Author :
Canfield, Philip C. ; Allstot, David J.
Author_Institution :
Hewlett-Packard Co., Santa Rosa, CA, USA
Volume :
25
Issue :
6
fYear :
1990
fDate :
12/1/1990 12:00:00 AM
Firstpage :
1544
Lastpage :
1549
Abstract :
A device structure consisting of an ion-implanted n-channel buried between an implanted p- region at the surface and an implanted p-region under the channel is presented. The deep p-layer (p-well) is extended beyond the source region of the MESFET and independently contacted through an ohmic p+ diffusion. In normal operation, the source and p-well (backgate) terminals are electrically shorted together, as in silicon CMOS technology. By using junction isolation rather than conventional resistive isolation, the p-well n-channel MESFETs are free of trap-related parasitic effects including drain current transients with very long time constants, low-frequency frequency-dependent small-signal drain conductance, sidegating between neighboring devices, light sensitivity, etc. While eliminating these classical MESFET problems, the radiofrequency performance of the p-well GaAs MESFET remains comparable to the conventional n-channel device
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; ion implantation; GaAs; implanted p-region; implanted p- region; ion-implanted n-channel; junction isolation; mixed-mode applications; monolithic IC; n-channel MESFETs; ohmic p+ diffusion; p-well GaAs MESFET technology; radiofrequency performance; CMOS technology; Electron mobility; Electron traps; Gallium arsenide; Isolation technology; MESFET integrated circuits; Microwave technology; Radio frequency; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.62191
Filename :
62191
Link To Document :
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