DocumentCode :
1542585
Title :
Radiation damage of standard and oxygenated silicon diodes irradiated by 16-MeV and 27-MeV protons
Author :
Bisello, D. ; Wyss, J. ; Candelori, A. ; Kaminsky, A. ; Pantano, D.
Author_Institution :
Dipartimento di Fisica, Padova Univ., Italy
Volume :
48
Issue :
4
fYear :
2001
fDate :
8/1/2001 12:00:00 AM
Firstpage :
1020
Lastpage :
1027
Abstract :
The effects of irradiation by 16- and 27-MeV protons on standard and oxygenated silicon diodes, processed by different technologies, have been investigated. The acceptor creation rate β can be lower for standard diodes than for state-of-the art oxygenated devices, suggesting that the role of oxygen is more complex than expected and must be folded with the technology of the fabrication process. In addition, we show the inaccuracy of the β normalization by the nonionizing energy loss factor not only for oxygenated diodes but also for standard nonoxygenated devices
Keywords :
proton effects; semiconductor diodes; silicon radiation detectors; 16 MeV; 27 MeV; Si:O; acceptor creation rate; fabrication process; nonionizing energy loss factor; oxygenated silicon diodes; proton irradiation; radiation damage; Breakdown voltage; Diodes; Energy loss; Lattices; Leakage current; Neutrons; Particle tracking; Protons; Radiation detectors; Silicon radiation detectors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.958717
Filename :
958717
Link To Document :
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