Title :
Si IC-compatible inductors and LC passive filters
Author :
Nguyen, Nhat M. ; Meyer, Robert G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
8/1/1990 12:00:00 AM
Abstract :
Passive inductors and LC filters fabricated in standard Si IC technology are demonstrated. Q-factors from three to eight and inductors up to 10 nH in the gigahertz range have been realized. Measurements on a five-pole maximally flat low-pass filter give midband insertion loss and -3 dB bandwidth close to the nominal design values of 2.25 dB and 880 MHz
Keywords :
Q-factor; bipolar integrated circuits; elemental semiconductors; equivalent circuits; inductors; integrated circuit technology; low-pass filters; passive filters; radiofrequency filters; silicon; 2.25 dB; 880 MHz; IC-compatible inductors; LC passive filters; Q-factors; Si; UHF; gigahertz range; low-pass filter; midband insertion loss; production bipolar process; standard Si IC technology; Artificial satellites; Band pass filters; Equations; Frequency; Gallium arsenide; Inductors; Low pass filters; Passive filters; Satellite broadcasting; Solid state circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
