Selective formation of an ultra-thin pore seal on mesorporous low-k for a copper dual damascene structure

A strategy for the selective formation of a pore sealing layer on mesoporous low-k applicable for a Cu dual damascene interconnection process is herein proposed. An ultra-thin, adhesive, and conformal pore sealing layer was formed on mesoporous low-k by spin coating macromolecules. The pore sealant on the Cu surface was selectively decomposed with the help of Cu₂O induced oxidization. This selective removal was also examined for patterned structure. Our simple and novel technique will help the integration of ulta-low-k materials in LSI devices.